A Silicon CMOS Monolithic RF and Microwave Switching Element

RF and microwave switching elements using silicon CMOS technology are being investigated and show promise as an alternative to the traditional PIN diode and GaAs MESFET devices. Silicon CMOS RF switching elements are attractive because of their potential application in all-silicon monolithic CMOS solutions for completely integrated baseband and RF functions in low cost wireless, mobile satellite and personal communications systems. Initial results of an SPDT switch show 1 dB insertioni loss and 44 dB isolation at 200 MHz on a developmental device with switch performance characterized to 2.0 GHz.