DocumentCode :
2136795
Title :
Infrared laser emission in a compact CW and quasi-CW diode pumped Nd3+: GdLuCOB laser
Author :
Brandus, C.A. ; Gheorghe, Lucian ; Dascalu, T.
Author_Institution :
Doctoral Sch. of Phys., Univ. of Bucharest, Bucharest, Romania
fYear :
2013
fDate :
9-13 Sept. 2013
Firstpage :
102
Lastpage :
103
Abstract :
Nd3+: GdLuCOB laser crystals were grown by the Czochralski pulling technique. CW and quasi-CW laser emission at 1.06 μm has been achieved from an uncoated, 5-at. % Nd3+: GdLuCOB crystal of 4.5-mm thickness, using end pumping at 811.9 nm and 812.3 nm, respectively, with fiber-coupled diode lasers. The maximum output powers for the CW and quasi-CW operations, were 167 mW and 178 mW for 1.31 W absorbed pump power, corresponding to the optical-to-optical efficiency with respect to the absorbed pump power of 0.13 and 0.24. Slope efficiency for both CW and quasi-CW operations were 0.45 and 0.31 and the absorbed pump powers at threshold 0.7 W, and 0.6 W, respectively.
Keywords :
crystal growth from melt; gadolinium compounds; laser beams; lutetium compounds; neodymium; optical pumping; semiconductor lasers; solid lasers; CW operations; Czochralski pulling technique; GdLuCOB:Nd; absorbed pump power; compact CW diode pumped laser; end pumping; fiber-coupled diode lasers; infrared laser emission; laser crystal; laser output powers; optical-to-optical efficiency; power 0.6 W; power 0.7 W; power 1.31 W; power 167 mW; power 178 mW; quasi-CW diode pumped laser; size 4.5 mm; slope efficiency; uncoated crystal; wavelength 1.06 mum; wavelength 811.9 nm; wavelength 812.3 nm; Crystals; Diode lasers; Laser excitation; Laser theory; Pump lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
ISSN :
2160-1518
Print_ISBN :
978-1-4799-0016-9
Type :
conf
DOI :
10.1109/CAOL.2013.6657543
Filename :
6657543
Link To Document :
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