Title :
Numerical analysis of the performance of AlGaAs/GaAs multi-quantum well Superluminescent diodes
Author :
Asgari, Asghar ; Navaeipour, P.
Author_Institution :
Res. Inst. for Appl. Phys. & Astron., Univ. of Tabriz, Tabriz, Iran
Abstract :
In this paper we have investigated numerically the performance of AlGaAs/GaAs multi-quantum well superluminescent diodes. In this device the dependence of optical gain, output power on the cavity length and the density states have been analyzed. It is observed that the optical gain and its FWHM bandwidth increase with increasing the density state. Also, the output power increases with increasing the cavity length, whereas the FWHM bandwidth decreases..
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; numerical analysis; quantum well devices; superluminescent diodes; AlGaAs-GaAs; FWHM bandwidth; cavity length; density states; multiquantum well superluminescent diodes; numerical analysis; optical gain; output power; Cavity resonators; Optical fiber sensors; Optical fibers; Optical reflection; Power amplifiers; Power generation; Superluminescent diodes;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
Print_ISBN :
978-1-4799-0016-9
DOI :
10.1109/CAOL.2013.6657549
