High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

Author

Long Tran ; Isobe, R. ; Delaney, M. ; Rhodes, R. ; Jang, D. ; Brown, J. ; Loi Nguyen ; Minh Le ; Thompson, M. ; Takyiu Liu

Author_Institution

Hughes Space & Commun. Co., El Segundo, CA, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

9

Abstract

A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 to 45.7 GHz. In addition, there are six other LNA designs including a four-stage V-band LNA with 28 dB of gain and 2.3 dB noise figure and a two-stage balanced Q-band LNA that provided 17 dB of gain and has greater than 61% yield.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; integrated circuit noise; integrated circuit yield; millimetre wave amplifiers; 1.8 dB; 17 dB; 2.3 dB; 26 to 31 dB; 28 dB; 42 to 50 GHz; InP; InP HEMTs; chip yield; four-stage V-band LNA; millimeter-wave MMIC low noise amplifiers; three-stage Q-band LNA; two-stage balanced Q-band LNA; Circuit testing; Gain; HEMTs; Indium phosphide; MMICs; MODFETs; Millimeter wave communication; Millimeter wave technology; Noise figure; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508451

Filename

508451