A Ka-band GaInP/GaAs HBT four-stage LNA

Author

Freundorfer, A.P. ; Jamani, Y. ; Falt, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

17

Abstract

A Ka-band GaInP/GaAs HBT four-stage LNA has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from digital HBT library.

Keywords

III-V semiconductors; bipolar transistor circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 15 dB; 27 to 30 GHz; 6 dB; GaInP-GaAs; Ka-band GaInP/GaAs HBT four-stage LNA; LMDS circuit; analog transmission; digital transmission; gain; local multipoint distribution system; multifunction T/R module; noise figure; Circuit noise; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Laboratories; Noise figure; Noise measurement; Software libraries; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508453

Filename

508453