MMICs for automotive radar applications

Author

Morenc, N.P.

Author_Institution

HE Microwave, Tucson, AZ, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

39

Abstract

The paper discusses trends in automotive radar applications and the use of MMICs in the transceiver design. Forward, rear, and side radar applications are discussed as a function of performance, size, cost, and Federal Communications Commission (FCC) radiation limits. Transceiver design options for each application are presented including choices for the active semiconductors required. GaAs, InP, and SiGe MMICs are design options for each application as are discrete semiconductor devices. Parameters used in device trade-offs, and advantages and disadvantages of each semiconductor technology relative to these parameters, are presented.

Keywords

MMIC; automotive electronics; radar applications; radar equipment; transceivers; FCC radiation limits; GaAs; InP; MMICs; SiGe; active semiconductors; automotive radar; discrete semiconductor devices; forward radar; rear radar; side radar; transceiver design; Automotive engineering; Cost function; FCC; Gallium arsenide; Germanium silicon alloys; Indium phosphide; MMICs; Radar applications; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508458

Filename

508458