Title :
MMICs for automotive radar applications
Author_Institution :
HE Microwave, Tucson, AZ, USA
Abstract :
The paper discusses trends in automotive radar applications and the use of MMICs in the transceiver design. Forward, rear, and side radar applications are discussed as a function of performance, size, cost, and Federal Communications Commission (FCC) radiation limits. Transceiver design options for each application are presented including choices for the active semiconductors required. GaAs, InP, and SiGe MMICs are design options for each application as are discrete semiconductor devices. Parameters used in device trade-offs, and advantages and disadvantages of each semiconductor technology relative to these parameters, are presented.
Keywords :
MMIC; automotive electronics; radar applications; radar equipment; transceivers; FCC radiation limits; GaAs; InP; MMICs; SiGe; active semiconductors; automotive radar; discrete semiconductor devices; forward radar; rear radar; side radar; transceiver design; Automotive engineering; Cost function; FCC; Gallium arsenide; Germanium silicon alloys; Indium phosphide; MMICs; Radar applications; Silicon germanium; Transceivers;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508458
