• DocumentCode
    2137841
  • Title

    High power V-band power amplifier using PHEMT technology

  • Author

    Goel, J. ; Onak, G. ; Stones, D.I. ; Yamauchi, D. ; Sharma, A. ; Tan, K. ; Mancini, J.

  • Author_Institution
    TRW Inc., Redondo Beach, CA, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    17-21 June 1996
  • Firstpage
    45
  • Abstract
    A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining.
  • Keywords
    HEMT integrated circuits; MMIC; MMIC power amplifiers; field effect MMIC; millimetre wave amplifiers; millimetre wave devices; power amplifiers; power combiners; 0.15 micron; 3.8 W; 31 dB; 59.5 to 63.5 GHz; 700 mW; T gate PHEMT technology; V-band; millimeter wave power amplifier; power MMIC; power module; radial power combiner; Frequency; Gain; HEMTs; High power amplifiers; MMICs; Millimeter wave technology; Multichip modules; PHEMTs; Power generation; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1996., IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3246-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1996.508459
  • Filename
    508459