DocumentCode
2137841
Title
High power V-band power amplifier using PHEMT technology
Author
Goel, J. ; Onak, G. ; Stones, D.I. ; Yamauchi, D. ; Sharma, A. ; Tan, K. ; Mancini, J.
Author_Institution
TRW Inc., Redondo Beach, CA, USA
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
45
Abstract
A millimeter wave power amplifier has been developed using power MMIC based on 0.15 Micron T gate pseudomorphic HEMT technology. A basic building block power module with 700 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Eight such modules have been power combined using a novel Radial combiner to achieve 3.8 Watt output power level with more than 31 dB gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 Watts can be easily achieved by using higher order of combining.
Keywords
HEMT integrated circuits; MMIC; MMIC power amplifiers; field effect MMIC; millimetre wave amplifiers; millimetre wave devices; power amplifiers; power combiners; 0.15 micron; 3.8 W; 31 dB; 59.5 to 63.5 GHz; 700 mW; T gate PHEMT technology; V-band; millimeter wave power amplifier; power MMIC; power module; radial power combiner; Frequency; Gain; HEMTs; High power amplifiers; MMICs; Millimeter wave technology; Multichip modules; PHEMTs; Power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508459
Filename
508459
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