A high-efficiency single-supply RFIC PHS linear power amplifier with low adjacent channel power leakage

Author

Nelson, B. ; Cripps, S. ; Kenney, J.S. ; Podell, A.F.

Author_Institution

Pacific Monolithics Inc., Sunnyvale, CA, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

49

Abstract

We present the results and simulation for two 1.9 GHz GaAs RFIC power amplifiers. Operated from a single 3.0 V supply at a power added efficiency of 40%, these RFIC´s produce +25 and +27 dBm output power, respectively, at -57 dBc adjacent channel power from a 384 kbps /spl pi//4-DQPSK modulated carrier at 600 kHz offset. When operating in a saturated mode the same RFIC´s have an output power greater than 26.5 and 28 dBm respectively at over 45% PAE which makes them very attractive for the saturated output applications. We believe this is the best performance reported to date for PHS/PACS mode operation using a single supply RFIC monolithic power amplifier. The design technique, including simulation of spectral regrowth based on AM-AM and AM-PM characteristics, are presented for these amplifiers.

Keywords

III-V semiconductors; UHF integrated circuits; UHF power amplifiers; gallium arsenide; land mobile radio; power integrated circuits; /spl pi//4-DQPSK modulated carrier; 1.9 GHz; 3.0 V; 384 kbit/s; 40 percent; 45 percent; AM-AM; AM-PM; GaAs; PHS/PACS mode; adjacent channel power leakage; design; output power; power added efficiency; saturated mode; simulation; single supply RFIC monolithic linear power amplifier; spectral regrowth; Dielectrics; Gallium arsenide; High power amplifiers; MESFETs; Power amplifiers; Power generation; Power supplies; Radiofrequency amplifiers; Radiofrequency integrated circuits; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508460

Filename

508460