A new spline based FET model for MESFETs and HEMTs

IN this paper a new spline based nonlinear transistor model for MESFETs and HEMTs is described. A bias dependent small signal equivalent circuit has been developed, as well as the corresponding static and large signal equivalent circuit. The linear circuit can be optimized without changing the quality of the static circuit. The nonlinear circuit is shown to be identical to the linear circuit for low input power and at all bias points. The model has been introduced into HP-EEsofs circuit simulator "Libra" and verified by utilizing linear and nonlinear measurements.