• DocumentCode
    2138135
  • Title

    A Ka-Band High Power Monolithic HEMT VCO Using a Sub-resonatore Circuit with Phase Control Architecture

  • Author

    Kashiwa, Takuo ; Katoh, Takayuki ; Ishida, Takao ; Kurusu, Hitoshi ; Mitsui, Yasuo

  • Author_Institution
    High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan. E-mail: kashiwa@oml.melco.co.jp
  • Volume
    1
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    12
  • Lastpage
    17
  • Abstract
    This paper reports on a high output performance of a Ka-band monolithic HEMT Voltage Controlled Oscillator(VCO). This VCO has a sub-resonator in order to avoid reduction in Q-factor of a resonator. Circuit elements of the sub-resonator are optimized to achieve a wide tuning range as well as high output power and low phase noise performances. In addition, an AlGaAs/InGaAs double-hetero structure High Electron Mobility Transistor(HEMT) is employed in the VCO to obtain a high output performance. A high output power of 19.4 dBm has been achieved at an oscillation frequency of 36.2 GHz. This performance has been achieved without any buffer amplifiers. A tuning range of more than 2.5 GHz is also obtained with a stable high output power. To our knowledge, this represents the highest output power of monolithic VCO without any buffer amplifiers.
  • Keywords
    Circuit optimization; HEMTs; Indium gallium arsenide; Phase control; Phase noise; Power amplifiers; Power generation; Q factor; Voltage control; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338084
  • Filename
    4139040