DocumentCode
2138177
Title
A new technology for Si microwave power transistor manufacturing
Author
Ping Li ; Boles, T.
Author_Institution
Corporate Res. & Dev. Center, M/A-COM Inc., Lowell, MA, USA
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
103
Abstract
We, for the first time, demonstrate a new process for Si power transistor manufacturing. The new process, combining the HMIC process and flip-chip process, completely changes the Si power transistor internal matching circuits design and manufacturing. S-band Si power transistor was used as a testing vehicle and under pulse operation condition. Pout=23 W with 7.9 dB of gain and 39% of efficiency were obtained at f=3.05 GHz and Vcc=36 V.
Keywords
elemental semiconductors; flip-chip devices; impedance matching; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor technology; silicon; 23 W; 3.05 GHz; 36 V; 39 percent; 7.9 dB; HMIC process; S-band; Si; Si microwave power transistor; design; flip-chip process; internal matching circuits; manufacturing technology; pulse operation; Bonding; Circuit testing; Glass; Impedance matching; Manufacturing processes; Microwave technology; Packaging; Power transistors; Semiconductor device manufacture; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508473
Filename
508473
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