A new, pre-discharge boron doping method for amorphous silicon photoconversion layer in HDTV image sensor

Author

Miyagawa, R. ; Iida, Y. ; Yano, K. ; Furukawa, A. ; Harada, N.

Author_Institution

Toshiba ULSI Res. Center, Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

74

Lastpage

77

Abstract

A novel predischarge boron doping method for amorphous silicon (a-Si) has been applied to a high-definition-television (HDTV) solid-state CCD imaging device. A lightly boron doped a-Si photoconversion layer achieved by this method has high resistivity (>10/sup 11/ Omega cm) and a large electron-mobility-lifetime product ( mu tau =3*10/sup -7/ cm/sup 2//V). Using this a-Si layer, a high-resolution, high-resistivity image sensor has been realized without any pixel separation structure in its photoconversion layer.<>

Keywords

CCD image sensors; boron; elemental semiconductors; high definition television; semiconductor doping; silicon; 100 Gohmcm; HDTV image sensor; amorphous Si:B; electron-mobility-lifetime product; high-definition-television; high-resistivity image sensor; high-resolution; photoconversion layer; predischarge doping method; resistivity; solid-state CCD imaging device; Amorphous silicon; Atomic measurements; Boron; Conductivity; Doping; Electrodes; HDTV; High-resolution imaging; Image resolution; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32754

Filename

32754