Title :
A new, pre-discharge boron doping method for amorphous silicon photoconversion layer in HDTV image sensor
Author :
Miyagawa, R. ; Iida, Y. ; Yano, K. ; Furukawa, A. ; Harada, N.
Author_Institution :
Toshiba ULSI Res. Center, Kawasaki, Japan
Abstract :
A novel predischarge boron doping method for amorphous silicon (a-Si) has been applied to a high-definition-television (HDTV) solid-state CCD imaging device. A lightly boron doped a-Si photoconversion layer achieved by this method has high resistivity (>10/sup 11/ Omega cm) and a large electron-mobility-lifetime product ( mu tau =3*10/sup -7/ cm/sup 2//V). Using this a-Si layer, a high-resolution, high-resistivity image sensor has been realized without any pixel separation structure in its photoconversion layer.<>
Keywords :
CCD image sensors; boron; elemental semiconductors; high definition television; semiconductor doping; silicon; 100 Gohmcm; HDTV image sensor; amorphous Si:B; electron-mobility-lifetime product; high-definition-television; high-resistivity image sensor; high-resolution; photoconversion layer; predischarge doping method; resistivity; solid-state CCD imaging device; Amorphous silicon; Atomic measurements; Boron; Conductivity; Doping; Electrodes; HDTV; High-resolution imaging; Image resolution; Pixel;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32754
