Title :
Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier
Author :
Hwang, Y. ; Chow, P.D. ; Lester, J. ; Chi, J. ; Garske, D. ; Biedenbender, M. ; Lai, R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; impedance matching; millimetre wave amplifiers; power amplifiers; 0.15 micron; 1 W; 2 mil; 30 percent; 44 GHz; EHF; GaAs; GaAs substrate; HEMT IC; MIMIC; MM-wave amplifier; MMIC solid state power amplifier; Q-band; TRW MMIC power process; fully-matched design; heat dissipation; high-efficiency operation; Frequency; HEMTs; High power amplifiers; Loss measurement; MMICs; Power amplifiers; Power generation; Semiconductor device measurement; Solid state circuits; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508483
