A new high sensitivity photo-transistor for area image sensors

Author

Yamashita, H. ; Matsunaga, Y. ; Iesaka, M. ; Manabe, S. ; Harada, N.

Author_Institution

Toshiba ULSI Res. Center, Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

78

Lastpage

81

Abstract

A novel MOS phototransistor with a high optical gain, called a double-gate floating-surface phototransistor, has been proposed and fabricated. The phototransistor realizes a 0.8-electron RMS noise equivalent signal over a 3.58-MHz-wide band. It achieves a dynamic range of 75 dB with an amplification characteristic suitable for TV-camera application. It is concluded that an ultra-high-sensitivity image sensor can be realized with this device.<>

Keywords

electron device noise; image sensors; insulated gate field effect transistors; phototransistors; television camera tubes; 3.58 MHz; MOS phototransistor; RMS noise equivalent signal; TV-camera application; amplification characteristic; area image sensors; double-gate floating-surface phototransistor; dynamic range; high optical gain; ultra-high-sensitivity image sensor; Capacitance; Electrodes; Electron optics; Image sensors; Optical noise; Optical sensors; Stimulated emission; Thickness control; Ultra large scale integration; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32755

Filename

32755