Title :
A new concept silicon homojunction infrared sensor
Author :
Tohyama, S. ; Teranishi, N. ; Konuma, K. ; Nishimura, M. ; Arai, K. ; Oda, E.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A novel silicon photovoltaic infrared sensor is proposed. It consists of three regions with a homojunction structure that has a flexibility designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infrared absorption and internal photoemission by free-electrons in a conduction band in a degenerated n/sup ++/-type silicon. Results obtained with fabricated sensors have verified the basic operating principle and have shown that the detectable wavelength range extends past 12 mu m.<>
Keywords :
elemental semiconductors; image sensors; infrared detectors; infrared imaging; silicon; 1.5 to 12 micron; 77 K; Si infrared sensors; barrier height tuned cutoff wavelength; conduction band; cutoff wavelength; degenerated n/sup ++/-type silicon; degerate n/sup ++/ type Si; detectable wavelength range; flexibility designed barrier height; free-electrons; homojunction infrared sensor; homojunction structure; infrared absorption; internal photoemission; operation; operational temperature; photovoltaic infrared sensor; semiconductors; Boron; Electron emission; Hot carriers; Infrared detectors; Infrared sensors; Laboratories; Microelectronics; National electric code; Photonic band gap; Silicon;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32756
