• DocumentCode
    21389
  • Title

    Inverted Tandem Phosphorescence Organic Light-Emitting Diodes Based on \\hbox {MoO}_{3}/\\hbox {Al/Cs}_{2}\\hbox {CO}_{3} Charge Generation Unit

  • Author

    Jun Liu ; Xindong Shi ; Xinkai Wu ; Jing Wang ; Gufeng He

  • Author_Institution
    Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
  • Volume
    11
  • Issue
    4
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    341
  • Lastpage
    345
  • Abstract
    A multilayer charge generation unit (CGU) MoO3/Al/Cs2CO3 has been developed for inverted tandem organic light-emitting diodes (OLEDs). The current efficiency of inverted tandem phosphorescence OLED with MoO3 (8 nm)/Al (1 nm)/ Cs2CO3 (0.5 nm) CGU is almost twice as high as that of individual electroluminescent (EL) device. Charges generate at hole-transporting host material/ MoO3 interface and MoO3 bulk layer, and electrons are extracted by Cs2CO3/electon-transporting layer (ETL) interface. The significantly enhanced performance of the tandem device with MoO3/Al/Cs2CO3 CGU compared with a MoO3/Cs2CO3-based one may be attributed to preventing chemical reaction of MoO3 and Cs2CO3 by the inserted ultrathin Al layer. Moreover, the current efficiency and EL spectrum of another inverted tandem OLED combining red and green stack further prove the effective charge generation and separation with the multilayer MoO3/Al/Cs2CO3 CGU. It is expected that such a CGU is a promising candidate for inverted tandem white OLED for active matrix organic light-emitting diode display driven by an n-type thin-film transistor backplane.
  • Keywords
    aluminium; caesium compounds; electroluminescent devices; molybdenum compounds; optical multilayers; organic light emitting diodes; phosphorescence; CGU; EL spectrum; ETL interface; MoO3-Al-Cs2CO3; OLED; active matrix organic light-emitting diode display; chemical reaction; electroluminescent device; electron-transporting layer interface; hole-transporting host material interface; inserted ultrathin Al layer; inverted tandem phosphorescence organic light-emitting diode; multilayer charge generation unit; n-type thin-film transistor backplane; size 0.5 nm; size 1 nm; size 8 nm; Active matrix organic light emitting diodes; Chemicals; Indium tin oxide; Materials; Performance evaluation; Thin film transistors; Charge generation unit (CGU); inverted; organic light-emitting diode (OLED); phosphorescence; tandem;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2015.2392118
  • Filename
    7010893