DocumentCode
21389
Title
Inverted Tandem Phosphorescence Organic Light-Emitting Diodes Based on
Charge Generation Unit
Author
Jun Liu ; Xindong Shi ; Xinkai Wu ; Jing Wang ; Gufeng He
Author_Institution
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
Volume
11
Issue
4
fYear
2015
fDate
Apr-15
Firstpage
341
Lastpage
345
Abstract
A multilayer charge generation unit (CGU) MoO3/Al/Cs2CO3 has been developed for inverted tandem organic light-emitting diodes (OLEDs). The current efficiency of inverted tandem phosphorescence OLED with MoO3 (8 nm)/Al (1 nm)/ Cs2CO3 (0.5 nm) CGU is almost twice as high as that of individual electroluminescent (EL) device. Charges generate at hole-transporting host material/ MoO3 interface and MoO3 bulk layer, and electrons are extracted by Cs2CO3/electon-transporting layer (ETL) interface. The significantly enhanced performance of the tandem device with MoO3/Al/Cs2CO3 CGU compared with a MoO3/Cs2CO3-based one may be attributed to preventing chemical reaction of MoO3 and Cs2CO3 by the inserted ultrathin Al layer. Moreover, the current efficiency and EL spectrum of another inverted tandem OLED combining red and green stack further prove the effective charge generation and separation with the multilayer MoO3/Al/Cs2CO3 CGU. It is expected that such a CGU is a promising candidate for inverted tandem white OLED for active matrix organic light-emitting diode display driven by an n-type thin-film transistor backplane.
Keywords
aluminium; caesium compounds; electroluminescent devices; molybdenum compounds; optical multilayers; organic light emitting diodes; phosphorescence; CGU; EL spectrum; ETL interface; MoO3-Al-Cs2CO3; OLED; active matrix organic light-emitting diode display; chemical reaction; electroluminescent device; electron-transporting layer interface; hole-transporting host material interface; inserted ultrathin Al layer; inverted tandem phosphorescence organic light-emitting diode; multilayer charge generation unit; n-type thin-film transistor backplane; size 0.5 nm; size 1 nm; size 8 nm; Active matrix organic light emitting diodes; Chemicals; Indium tin oxide; Materials; Performance evaluation; Thin film transistors; Charge generation unit (CGU); inverted; organic light-emitting diode (OLED); phosphorescence; tandem;
fLanguage
English
Journal_Title
Display Technology, Journal of
Publisher
ieee
ISSN
1551-319X
Type
jour
DOI
10.1109/JDT.2015.2392118
Filename
7010893
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