DocumentCode :
2138931
Title :
Coplanar High Gain Millimeter Wave Amplifier Module
Author :
Ferling, D. ; Florjancic, M. ; Gutu-Nelle, A. ; Richter, H. ; Heinrich, W. ; Schmuckle, F.J. ; Schlechtweg, M.
Author_Institution :
Alcatel Telecom, Lorenzstr. 10, Abt. ZFZ/WM, D-70435 Stuttgart, Germany. dferling@rcs.sel.de
Volume :
1
fYear :
1998
fDate :
Oct. 1998
Firstpage :
206
Lastpage :
211
Abstract :
A 58 GHz amplifier module with more than 55 dB gain has been developed in coplanar technology. The signal distortion could be minimized by using a low number of substrates and high performance interconnection and packaging technologies. Flip chip bonding of the MMICs allowed the minimization of the parasitic inductance and capacitance of the chip interconnection. By two local cavities, realized as substrate integrated packages (SIP) on one thin film substrate, a miniaturized solution to reduce cross talk inside the package was used resulting in an isolation of more than 80 dB. The coupling of the coplanar mode to other parasitic modes could be suppressed by a special coplanar feed-through for the SIP. A direct coaxial to coplanar transition allowed the realization of a pure coplanar signal path between the coaxial connectors at the module input and output.
Keywords :
Bonding; Coaxial components; Distortion; Flip chip; Gain; Isolation technology; MMICs; Millimeter wave technology; Packaging; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
Type :
conf
DOI :
10.1109/EUMA.1998.337987
Filename :
4139074
Link To Document :
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