• DocumentCode
    2138931
  • Title

    Coplanar High Gain Millimeter Wave Amplifier Module

  • Author

    Ferling, D. ; Florjancic, M. ; Gutu-Nelle, A. ; Richter, H. ; Heinrich, W. ; Schmuckle, F.J. ; Schlechtweg, M.

  • Author_Institution
    Alcatel Telecom, Lorenzstr. 10, Abt. ZFZ/WM, D-70435 Stuttgart, Germany. dferling@rcs.sel.de
  • Volume
    1
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    206
  • Lastpage
    211
  • Abstract
    A 58 GHz amplifier module with more than 55 dB gain has been developed in coplanar technology. The signal distortion could be minimized by using a low number of substrates and high performance interconnection and packaging technologies. Flip chip bonding of the MMICs allowed the minimization of the parasitic inductance and capacitance of the chip interconnection. By two local cavities, realized as substrate integrated packages (SIP) on one thin film substrate, a miniaturized solution to reduce cross talk inside the package was used resulting in an isolation of more than 80 dB. The coupling of the coplanar mode to other parasitic modes could be suppressed by a special coplanar feed-through for the SIP. A direct coaxial to coplanar transition allowed the realization of a pure coplanar signal path between the coaxial connectors at the module input and output.
  • Keywords
    Bonding; Coaxial components; Distortion; Flip chip; Gain; Isolation technology; MMICs; Millimeter wave technology; Packaging; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.337987
  • Filename
    4139074