DocumentCode
2138931
Title
Coplanar High Gain Millimeter Wave Amplifier Module
Author
Ferling, D. ; Florjancic, M. ; Gutu-Nelle, A. ; Richter, H. ; Heinrich, W. ; Schmuckle, F.J. ; Schlechtweg, M.
Author_Institution
Alcatel Telecom, Lorenzstr. 10, Abt. ZFZ/WM, D-70435 Stuttgart, Germany. dferling@rcs.sel.de
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
206
Lastpage
211
Abstract
A 58 GHz amplifier module with more than 55 dB gain has been developed in coplanar technology. The signal distortion could be minimized by using a low number of substrates and high performance interconnection and packaging technologies. Flip chip bonding of the MMICs allowed the minimization of the parasitic inductance and capacitance of the chip interconnection. By two local cavities, realized as substrate integrated packages (SIP) on one thin film substrate, a miniaturized solution to reduce cross talk inside the package was used resulting in an isolation of more than 80 dB. The coupling of the coplanar mode to other parasitic modes could be suppressed by a special coplanar feed-through for the SIP. A direct coaxial to coplanar transition allowed the realization of a pure coplanar signal path between the coaxial connectors at the module input and output.
Keywords
Bonding; Coaxial components; Distortion; Flip chip; Gain; Isolation technology; MMICs; Millimeter wave technology; Packaging; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.337987
Filename
4139074
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