Title :
Frequency translation MMICs using InP HEMT technology
Author :
Tran, L. ; Delaney, M. ; Isobe, R. ; Jang, D. ; Brown, J.
Author_Institution :
Hughes Space & Commun. Co., El Segundo, CA, USA
Abstract :
Frequency translation circuits are key elements in communication systems. This paper presents three different frequency multipliers and a frequency mixer designed using the InP HEMT technology. These successful first iteration MMICs are highlighted by a V-band frequency quadrupler that has 14.25 dB conversion gain with +3.25 dBm output power and a V-band mixer that has 10 dB conversion loss over a 12 GHz bandwidth.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; field effect MIMIC; field effect MMIC; frequency multipliers; indium compounds; millimetre wave frequency convertors; millimetre wave mixers; 10 dB; 12 GHz; 13.25 GHz; 14.25 dB; 26.5 GHz; 54 GHz; EHF; InP; InP HEMT technology; Ka-band frequency doubler; SHF; V-band frequency quadrupler; V-band mixer; frequency mixer; frequency multipliers; frequency translation MMICs; Circuits; Cutoff frequency; Frequency conversion; HEMTs; Indium phosphide; MMICs; Mixers; Noise figure; Power generation; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508507
