• DocumentCode
    2139018
  • Title

    New GaInP/GaAS-HBT Large-Signal Model for Power Applications

  • Author

    Rudolph, M. ; Doemer, R. ; Heymann, P.

  • Author_Institution
    Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin. Phone: +49 30 6392 2644, Fax: +49 30 6392 2642, e-mail: rudolph@fbh-berlin.de
  • Volume
    1
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    231
  • Lastpage
    235
  • Abstract
    A new GaInP/GaAs HBT model for power applications is presented. It is based on the GUMMEL-POON model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.
  • Keywords
    Current density; Diodes; Electromagnetic heating; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; Microwave transistors; Temperature dependence; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.337992
  • Filename
    4139079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2139018