Title :
New GaInP/GaAS-HBT Large-Signal Model for Power Applications
Author :
Rudolph, M. ; Doemer, R. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin. Phone: +49 30 6392 2644, Fax: +49 30 6392 2642, e-mail: rudolph@fbh-berlin.de
Abstract :
A new GaInP/GaAs HBT model for power applications is presented. It is based on the GUMMEL-POON model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.
Keywords :
Current density; Diodes; Electromagnetic heating; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; Microwave transistors; Temperature dependence; Thermal resistance;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.337992
