Title :
26 GHz coplanar SiGe MMICs
Author :
Rheinfelder, C. ; Strohm, K. ; Beisswanger, F. ; Gerdes, J. ; Schmuckle, F.J. ; Luy, J.-F. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier are achieved. This demonstrates the potential of SiGe transistors for applications in the higher microwave range.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC oscillators; bipolar MMIC; coplanar waveguides; heterojunction bipolar transistors; semiconductor materials; 26 GHz; 4.4 dB; CPW; Ka-band; SHF; Si; SiGe; coplanar SiGe MMICs; double-mesa HBT process; high-resistivity Si substrates; microwave range; one-stage amplifier; oscillator; Circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508510
