Title :
High voltage tolerant stacked MOSFET in a Buck converter application
Author :
Page, Stacey ; Wajda, Andrew ; Hess, Herbert
Author_Institution :
Electr. & Comput. Eng., Univ. of Idaho, Moscow, ID, USA
Abstract :
A Buck converter, created with a monolithic implementation of series connected MOSFETs at high-voltage, is presented. Using a single low-voltage control signal to trigger the bottom MOSFET in the series stack, a voltage division across parasitic and inserted capacitances in the circuit is used to turn on the entire stack of devices. The governing equations for the Stacked MOSFET are presented, and reliable operation for use in a Buck converter is presented in a 0.180 um Silicon-on-Insulator (SOI) CMOS process. The prototype is shown to handle 25 mA with a rail voltage of 3.3 V and a frequency range of 1-20 Megahertz.
Keywords :
CMOS integrated circuits; power MOSFET; power convertors; silicon-on-insulator; SOI CMOS process; bottom MOSFET; buck converter application; current 25 mA; frequency 1 MHz to 20 MHz; high voltage tolerant stacked MOSFET; inserted capacitances; parasitic capacitances; series connected MOSFET monolithic implementation; silicon-on-insulator CMOS process; single low-voltage control signal; size 0.018 mum; voltage 3.3 V; voltage division; Capacitance; Capacitors; Logic gates; MOS devices; MOSFET circuits; Mathematical model; Transistors; CMOS Buck Converter; Stacked MOSFET; high voltage tolerant CMOS;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4577-1735-2
DOI :
10.1109/WMED.2012.6202612
