Numerical simulation of heat generation during the back grinding process of silicon wafers

The optimization of grinding parameters for silicon wafers is necessary in order to increase the reliability of electronic packages. Grinding is a mechanical process performed on silicon wafers during which heat is generated. The amount of heat generated affects the reliability of the wafer, and implicitly that of the final product. This paper describes the work performed to simulate the heat generated during a back grinding process for silicon wafers using the commercial finite element code ABAQUS. The grinding of a silicon wafer with a thickness of 60 μm mounted on a carrier wafer using bond adhesive material was simulated. The heat generated is caused by the friction between the grinding wheel and the backside of the silicon wafer. The computed temperature change due to friction in the wafer was compared with experimental and numerical values, and showed a good correlation. The numerical model developed can be used to better understand the local grinding temperature in the wafers and to estimate the effect of the grinding parameters on the temperature rise.