• DocumentCode
    2139167
  • Title

    Leaky wave behaviour in the silicon H-guide with optically induced plasma region

  • Author

    Satomura, Y. ; Sumida, S. ; Tsutsumi, M.

  • Author_Institution
    Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
  • Volume
    1
  • fYear
    1996
  • fDate
    17-21 June 1996
  • Firstpage
    287
  • Abstract
    The propagation properties of leaky millimeter waves in the silicon H-guide containing optically induced plasma region have been investigated at Q band including NRD-guide behaviour. The possible optical control devices, such as switching devices from guided to leaky waves, have been examined by utilizing the transition characteristics from guided waves into leaky waves due to optical illumination.
  • Keywords
    elemental semiconductors; nonradiative dielectric waveguides; photoconducting switches; semiconductor plasma; silicon; NRD guide; Q band; Si; guided waves; leaky waves; millimeter wave propagation; optical control device; optically induced plasma; silicon H-guide; switching device; Frequency; Lighting; Millimeter wave technology; Optical attenuators; Optical control; Optical devices; Optical waveguides; Plasma properties; Plasma waves; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1996., IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3246-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1996.508513
  • Filename
    508513