Title :
Modeling the substrate effect of RF MOSFET’s based on four-port measurement
Author :
Wu, Shih-Dao ; Guo-Wei Huang ; Liao, Kuo-hsiang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
In this paper, several 0.13 μm RF NMOSFET´s were characterized by 4-port s-parameter measurement and the parameters of the small-signal equivalent circuit model of the RF MOSFET´s were extracted from the 4-port measurement data directly. The frequency range of 4-port measurement is extended from 200 MHz to 20 GHz. While all parameters of the small-signal equivalent circuit model were extracted, the simulated and measured data were compared and found that they agreed with each other within the entire measurement frequency range.
Keywords :
MOSFET; S-parameters; equivalent circuits; semiconductor device models; substrates; RF MOSFET; four-port measurement; frequency 200 MHz to 20 GHz; s-parameter measurement; size 0.13 μm; small-signal equivalent circuit; substrate effect; Capacitance; Circuit simulation; Circuit testing; Data mining; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Immune system; MOSFET circuits; Radio frequency; 4-port measurement; RF MOSFET; substrate resistance;
Conference_Titel :
ARFTG Conference, 2006 67th
Conference_Location :
San Francisco, CA
Print_ISBN :
978-0-7803-9529-9
DOI :
10.1109/ARFTG.2006.4734373
