Analysis of electromagnetic wave propagation on coplanar waveguides on doped semiconductor substrates

Author

LaRocca, T.R. ; Reyes, A.C. ; El-Ghazaly, S.M.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

295

Abstract

High resistivity silicon substrates demonstrated strong potential for applications as a microwave and millimeter wave substrate. A method to simulate a coplanar waveguide (CPW) on a doped semiconductor substrate is presented. Its salient point is the inclusion of a voltage dependent depletion width and built-in voltage due to the metal-semiconductor (Schottky) contact. The attenuation, effective dielectric constant, and characteristic impedance are determined for different modes and applied biases.

Keywords

Schottky barriers; coplanar waveguides; elemental semiconductors; silicon; waveguide theory; Si; attenuation; built-in voltage; characteristic impedance; coplanar waveguide; doped semiconductor substrate; effective dielectric constant; electromagnetic wave propagation; high resistivity silicon; metal-semiconductor Schottky contact; microwaves; millimeter waves; simulation; voltage dependent depletion width; Conductivity; Coplanar waveguides; Dielectric substrates; Electromagnetic analysis; Electromagnetic propagation; Electromagnetic waveguides; Millimeter wave propagation; Semiconductor waveguides; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508515

Filename

508515