DocumentCode
2139236
Title
Electromagnetic analysis of effective anisotropic material parameters for metal dummies in a CMOS chip
Author
Hirano, Takuichi ; Okada, Kenichi ; Hirokawa, Jiro ; Ando, Makoto
Author_Institution
Dept. of Int., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2012
fDate
8-14 July 2012
Firstpage
1
Lastpage
2
Abstract
Equivalent anisotropic material parameters for metal dummies in a CMOS chip are extracted using eigenmode analysis for a unit-cell of a space filled with metal dummies. For verification, a space filled with periodically arranged 5 μm × 5 μm aluminum dummy fills with area density of 25 % are numerically simulated. Anisotropic characteristics and higher effective permittivity, of about 20-75 %, are observed.
Keywords
CMOS integrated circuits; MIMIC; aluminium; eigenvalues and eigenfunctions; electromagnetic fields; permittivity; CMOS chip; aluminum dummy; effective anisotropic material parameters; effective permittivity; eigenmode analysis; electromagnetic analysis; metal dummies; millimeter-wave CMOS RF circuits; unit-cell; Anisotropic magnetoresistance; CMOS integrated circuits; Dielectrics; Metals; Permittivity; Propagation constant; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
Conference_Location
Chicago, IL
ISSN
1522-3965
Print_ISBN
978-1-4673-0461-0
Type
conf
DOI
10.1109/APS.2012.6348496
Filename
6348496
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