DocumentCode
2139314
Title
Determination of FET Extrinsic Elements by Electromagnetic Simulation: Comparison of Microstrip and Coplanar Environment
Author
Huynh, N.-H. ; Heinrich, W. ; Keller, R.
Author_Institution
Ferdinand-Braun-Institut fÿr Hochfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin / Germany, Tel.: +49-30-6392-2627, FAX: +49-30-6392-2642, email: huynh@fbh-berlin.de
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
312
Lastpage
317
Abstract
The FET inductances and extrinsic capacitances are calculated by means of the 3D Finite-Difference method in frequency domain (FDFD). The results are used to study the influence of transmission-line environment (coplanar or microstrip) on FET equivalent circuit. This allows to predict changes of the extrinsic elements when varying periphery, e.g., using a coplanar-based FET model in a microstrip circuit. Additional measurements are not required. Furthermore, the distance of the source via in the microstrip case is varied and the resulting changes in the model are investigated.
Keywords
Capacitance; Circuit simulation; Coplanar waveguides; Coupling circuits; Equivalent circuits; Frequency domain analysis; Inductance; Microstrip; Microwave FETs; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338006
Filename
4139093
Link To Document