DocumentCode
2139367
Title
A New Consistent RF-and Noise Model with Special Emphasis on Impact Ionisation for Dual-Gate HFET in Cascode Configuration
Author
Breder, T. ; Reuter, R. ; Daumann, W. ; Schreurs, D. ; van der Zanden, K. ; Brockerhoff, W. ; Tegude, F.J.
Author_Institution
Solid-State Electronics Department of the Gerhard-Mercator-University Duisburg, Germany. breder@hlt.uni-duisburg.de
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
323
Lastpage
327
Abstract
A consistent small-signal and RF-noise equivalent circuit for Dual-Gate Heterostructure Field Effect Transistors, including the influence of impact ionisation and gate-leakage current on the electronic properties, is presented. The capability of the new model is clearly demonstrated by bias-dependent investigations of the RF- and noise behaviour of InAlAs/InGaAs/InP-DGHFET.
Keywords
Circuit noise; Equivalent circuits; Frequency; HEMTs; Impact ionization; MODFETs; Noise figure; Temperature; Voltage; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338008
Filename
4139095
Link To Document