A new global finite element analysis of microwave circuits including lumped elements

Author

Guillouard, K. ; Wong, M.F. ; Hanna, V.F. ; Citerne, J.

Author_Institution

France Telecom-CNET, France

Volume

1

fYear

1996

fDate

17-21 June 1996

Firstpage

355

Abstract

A new fullwave global analysis of complex inhomogeneous structures including passive or active, linear or non linear lumped elements is presented. Only one electromagnetic simulation of the distributed part, by a 3D finite element method using edge elements, is needed corresponding to the insertion of several lumped elements placed at the same position. Results for a resistor, a diode inserted in a microstrip circuit as well as a Gunn diode amplifier are presented and comparisons with measurements are given for an active structure.

Keywords

circuit analysis computing; finite element analysis; lumped parameter networks; microwave circuits; 3D finite element method; Gunn diode amplifier; active elements; diode; edge elements; electromagnetic simulation; full-wave global analysis; inhomogeneous structures; linear elements; lumped elements; microstrip circuit; microwave circuits; nonlinear elements; passive elements; resistor; Admittance; Capacitors; Circuit analysis; Circuit simulation; Diodes; Finite element methods; Maxwell equations; Microwave circuits; Resistors; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508529

Filename

508529