• DocumentCode
    2139544
  • Title

    Anisotropic etching diagrams-another way to look at them

  • Author

    Moldovan, N. ; Nedelcu, S. ; Diculescu, M.

  • Author_Institution
    Inst. of Microtechnol., Bucharest, Romania
  • Volume
    2
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    561
  • Abstract
    Starting from a simple model for the step movement, a new interpretation is given to the anisotropic etching angular diagrams. The etching rates along a few main directions, corresponding to some fundamental mechanisms of etching, can explain entirely the complex form of the diagrams. This reduces drastically the number of parameters necessary to describe the diagrams and shows that STM investigations for deducing the mechanisms of etching have to be made only for a limited number of planes
  • Keywords
    etching; scanning tunnelling microscopy; STM; anisotropic etching angular diagram; etching rate; model; step movement; Anisotropic magnetoresistance; Crystalline materials; Geometry; Kinematics; Lattices; Numerical simulation; Shape; Steady-state; Tunneling; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651322
  • Filename
    651322