DocumentCode
2139725
Title
Non-steady-state photoelectromotive force in AlN crystal
Author
Bryushinin, M. ; Kulikov, V. ; Mokhov, E. ; Nagalyuk, S. ; Sokolov, Igor
Author_Institution
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear
2013
fDate
9-13 Sept. 2013
Firstpage
399
Lastpage
401
Abstract
The experimental investigation of the non-steady-state photoelectromotive force in aluminium nitride crystal is reported. The experiments are performed for two geometries, where arising photocurrent is parallel or perpendicular to the optical axis of the crystal. Dependencies of the signal amplitude versus light intensity, temporal and spatial frequencies are measured. The photoelectric parameters of the material are estimated for the light wavelength λ = 532 nm.
Keywords
III-V semiconductors; aluminium compounds; photoconductivity; wide band gap semiconductors; AlN; aluminium nitride crystal; light intensity; light wavelength; nonsteady-state photoelectromotive force; optical axis; photocurrent; photoelectric parameters; signal amplitude; spatial frequencies; temporal frequencies; wavelength 532 nm; Crystals; Force; Frequency modulation; Gratings; III-V semiconductor materials; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location
Sudak
ISSN
2160-1518
Print_ISBN
978-1-4799-0016-9
Type
conf
DOI
10.1109/CAOL.2013.6657652
Filename
6657652
Link To Document