DocumentCode :
2139725
Title :
Non-steady-state photoelectromotive force in AlN crystal
Author :
Bryushinin, M. ; Kulikov, V. ; Mokhov, E. ; Nagalyuk, S. ; Sokolov, Igor
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear :
2013
fDate :
9-13 Sept. 2013
Firstpage :
399
Lastpage :
401
Abstract :
The experimental investigation of the non-steady-state photoelectromotive force in aluminium nitride crystal is reported. The experiments are performed for two geometries, where arising photocurrent is parallel or perpendicular to the optical axis of the crystal. Dependencies of the signal amplitude versus light intensity, temporal and spatial frequencies are measured. The photoelectric parameters of the material are estimated for the light wavelength λ = 532 nm.
Keywords :
III-V semiconductors; aluminium compounds; photoconductivity; wide band gap semiconductors; AlN; aluminium nitride crystal; light intensity; light wavelength; nonsteady-state photoelectromotive force; optical axis; photocurrent; photoelectric parameters; signal amplitude; spatial frequencies; temporal frequencies; wavelength 532 nm; Crystals; Force; Frequency modulation; Gratings; III-V semiconductor materials; Photoconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
ISSN :
2160-1518
Print_ISBN :
978-1-4799-0016-9
Type :
conf
DOI :
10.1109/CAOL.2013.6657652
Filename :
6657652
Link To Document :
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