DocumentCode
2139845
Title
Reduced Leakage CPW Interconnect and Schottky Diodes on SiO2-High Resistivity Silicon Substrate
Author
Wu, Y ; Armstrong, BM. ; Gamble, HS ; Yang, S. ; Fusco, VF ; Stewart, Jac
Author_Institution
Northern Ireland Semiconductor Research Centre, Department of Electrical and Electronic Engineering, The Queen´´s University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland. Tel: 01232-335462, Fax: 01232-667023, email: y.wu
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
427
Lastpage
432
Abstract
In this paper a novel implanted Schottky diode is designed. The diode and it´s CPW interconnect have localized SiO2 insulation barriers included. These are shown to help reduce the substrate leakage current that acts in parallel with the diode. Also, the SiO2 barriers reduce diode shot noise hence improve detection performance. Experimental evidence is given in order to justify these claims.
Keywords
Conductivity; Coplanar waveguides; Detectors; Dielectric substrates; Gunshot detection systems; Leakage current; Low voltage; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338027
Filename
4139114
Link To Document