DocumentCode
2139867
Title
A complementary approach to the access design of millimeter power HFETs
Author
Niquet, Y.M. ; Piotrowicz, S. ; Bonte, B. ; Hue, X. ; Trassaert, S. ; Boudart, B. ; Crosnier, Y.
Author_Institution
Institut d´´Electronique et de Micro?lectronique du Nord, U.M.R. C.N.R.S. 9929, D?partement Hyperfr?quences et Semiconducteurs, Cit? Scientifique - Avenue Poincar? BP 69, 59652 Villeneuve d´´Ascq Cedex, France.
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
433
Lastpage
438
Abstract
We discuss the access design of millimeter power HFETs. On one hand, a numerical study is carried out to get the dependance of the extrinsic elements on design parameters such as airbridge height or drain/gate, gate/source distances. On the other hand, specific structures have been realized to extract parasitic elements from S parameter measurements. Finally, a comparison will be done.
Keywords
Bridge circuits; Computational modeling; Electromagnetic fields; Fingers; Frequency; HEMTs; MODFETs; Microstrip components; Millimeter wave measurements; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338028
Filename
4139115
Link To Document