A novel method to determine the source and drain resistances of individual MOSFETs

Author

Ricco, B. ; Selmi, L. ; Sangiorgi, E.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

122

Lastpage

125

Abstract

A novel method is presented to determine the bias-dependent series resistances and intrinsic conductance factor of individual MOSFETs. The parameter-extraction procedure can also be applied to groups of scaled transistors to work out the device effective channel length. The method is derived analytically from the conventional theory of ideal MOSFETs, and the deviations of real devices from such a case are studied using two-dimensional device simulations. Experimental results with n- and p-channel conventional and LDD (lightly doped drain) MOSFETs are presented to demonstrate the correctness of the method.<>

Keywords

electric resistance measurement; insulated gate field effect transistors; semiconductor device models; MOSFETs; drain resistances; effective channel length; intrinsic conductance factor; n-channel LDD MOSFET; p-channel LDD MOSFET; parameter-extraction procedure; series resistances; two-dimensional device simulations; Analytical models; Data mining; Degradation; Electrical resistance measurement; Extrapolation; MOSFETs; Parameter extraction; Physics; Transistors; Variable structure systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32768

Filename

32768