Title :
Linearised 2 GHz amplifier for IMT-2000
Author :
Yu, Chi Sun ; Chan, Wing Shing ; Chan, Wing-Le
Author_Institution :
Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, China
Abstract :
Under large signal conditions, amplifiers using GaAs FETs have high input non-linearity due to the non-linear gate-to-source capacitance Cgs which will result in AM-PM distortion. The method presented uses a parallel connected varactor diode to linearise a GaAs FET amplifier. A reduction of 10 dB in spectral regrowth at 2 GHz is achieved with a low loss. This method is suitable for circuit miniaturisation and can be applied to amplifiers for IMT-2000
Keywords :
UHF amplifiers; field effect transistor circuits; land mobile radio; varactors; 2 GHz; AM-PM distortion; FET; FET amplifier; GaAs; III V semiconductor; IMT-2000; UHF; circuit miniaturisation; high input nonlinearity; large signal conditions; linearised amplifier; mobile radio; nonlinear gate-to-source capacitance; parallel connected varactor diode; spectral regrowth method; Capacitance; Circuits; Diodes; FETs; Gallium arsenide; Modulation; Nonlinear distortion; Quadrature phase shift keying; Varactors; Voltage;
Conference_Titel :
Vehicular Technology Conference Proceedings, 2000. VTC 2000-Spring Tokyo. 2000 IEEE 51st
Conference_Location :
Tokyo
Print_ISBN :
0-7803-5718-3
DOI :
10.1109/VETECS.2000.851455
