Title :
Millimeter-wave AlGaAs/InGaAs/GaAs quantum well power MISFET
Author :
Kim, B. ; Matyi, R.J. ; Wurtele, M. ; Bradshaw, K. ; Tserng, H.Q.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
State-of-the-art millimeter-wave power transistors using quantum-well MISFET structures have been developed. Single- and double-quantum-well devices have been built, with maximum currents of 700 mA/mm for the single-well and 900 mA/mm for the double-well devices. The single-well devices delivered a power density of 0.76 W/mm with 3.6-dB gain and 19% efficiency at 60 GHz. The double well MISFETs had a power density of 0.96 W/mm with 3-dB gain and 24% power-added efficiency at 55 GHz. The highest power-added efficiency was 31% with 0.68 W/mm power density and 4-dB gain. The power performance of the double-well device was better than that of the single-well device.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; semiconductor quantum wells; solid-state microwave devices; 19 percent; 24 percent; 3 dB; 3.6 dB; 31 percent; 4 dB; 55 GHz; 60 GHz; AlGaAs-InGaAs-GaAs; double-quantum-well devices; efficiency; gain; maximum currents; millimeter-wave power transistors; power density; power-added efficiency; quantum-well MISFET structures; single-well devices; Current density; Degradation; Electrons; FETs; Gain; Gallium arsenide; Indium gallium arsenide; MESFETs; MISFETs; Millimeter wave transistors;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32781
