Title :
DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTs
Author :
Mishra, U.K. ; Brown, A.S. ; Rosenbaum, S.E.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1- mu m gate length HEMTs using pseudomorphic Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As modulation-doped epitaxial layers and compared them with lattice-matched Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As HEMTs. The pseudomorphic HEMTs demonstrated an external f/sub T/ (current-gain cutoff frequency) of 205 GHz, which is the first demonstration of a transistor with an f/sub T/>200 GHz. The V-band noise figure of an amplifier built with the lattice-matched HEMT and the pseudomorphic HEMTs was 1.3 dB and 1.5 dB, respectively. The associated gain was 9.5 dB and 8.0 dB, respectively.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 1.3 dB; 1.5 dB; 205 GHz; 8 dB; 9.5 dB; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As; DC performance; RF performance; V-band noise figure; amplifier; current-gain cutoff frequency; epitaxial layer design; fabrication; gain; gate length; high-electron-mobility transistors; millimeter-wave performance; pseudomorphic HEMTs; Cutoff frequency; Epitaxial layers; Fabrication; Gain; HEMTs; MODFETs; Millimeter wave transistors; Noise figure; PHEMTs; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32784
