Millimeter-wave AlGaAs hetero-MIS gate InP field effect transistors

Author

Asano, K. ; Itoh, T. ; Kasahara, K. ; Ozawa, T. ; Ohata, K.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

187

Lastpage

190

Abstract

The authors report the fabrication and performance of millimeter-wave InP FETs (field-effect transistors) with an MBE (molecular beam epitaxy)-grown AlGaAs hetero-MIS gate structure and a selective ion-implantation channel. FETs with recessed gate structure exhibited good, stable DC characteristics with high current and high breakdown voltage. At 38 GHz, an 8.1-dB small-signal power gain was obtained for a device with a 0.6- mu m gate-length. A power FET with a gate width of 420 mu m exhibited maximum output power of 100 mW (0.25 W/mm).<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 0.6 micron; 100 mW; 38 GHz; 8.1 dB; AlGaAs-InP; MBE; MM-wave FET; gate-length; hetero-MIS gate structure; output power; power FET; recessed gate structure; selective ion-implantation channel; small-signal power gain; stable DC characteristics; FETs; Fabrication; Gold; Indium phosphide; Insulation; MISFETs; Microelectronics; Millimeter wave technology; Millimeter wave transistors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32786

Filename

32786