Title :
Hot-electron currents in deep-submicrometer MOSFETs
Author :
Chung, J. ; Jeng, M. ; May, G. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented. The substrate- and gate-current characteristics for devices with channel lengths as small as 0.2 mu m and oxide thickness as thin as 55 AA are examined. Implications for MOSFET reliability and EPROM programming are discussed. In the deep-submicrometer regime, established hot-electron concepts and models are found to be applicable; however, consideration of the finite depth of the current path and current-crowding-induced weak gain control becomes much more important. With these modifications, physical analytical models for substrate and gate currents are developed and verified for deep-submicrometer devices.<>
Keywords :
hot carriers; insulated gate field effect transistors; reliability; semiconductor device models; semiconductor device testing; EPROM programming; analytical models; channel lengths; current path depth; current-crowding-induced weak gain control; deep-submicrometer MOSFETs; gate currents; hot electron currents; oxide thickness; physical model; reliability; substrate current; Analytical models; Degradation; EPROM; Ice thickness; Impact ionization; Linearity; MOSFETs; Power supplies; Voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32790
