Microwave low insertion loss SAW filter by using ZnO/sapphire substrate with Ni dopant

Author

Ieki, H. ; Tanaka, H. ; Koike, J. ; Nishikawa, T.

Author_Institution

Murata Manuf. Co. Ltd., Kyoto, Japan

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

409

Abstract

Microwave low insertion loss SAW filters are realized by using ZnO epitaxial films on a sapphire substrate. The epitaxial growth conditions and dopant are carefully determined to realize low propagation loss and high stability. 1.5 to 2.5 GHz range SAW filters are fabricated with an insertion loss of only 1 to 2 dB and outline dimensions of 0.01 to 0.02 cc.

Keywords

II-VI semiconductors; UHF filters; acoustic microwave devices; nickel; sapphire; semiconductor epitaxial layers; semiconductor growth; surface acoustic wave filters; vapour phase epitaxial growth; zinc compounds; 1 to 2 dB; 1.5 to 2.5 GHz; Al/sub 2/O/sub 3/; Ni dopant; RF planar magnetron sputtering; ZnO epitaxial films; ZnO:Ni-Al/sub 2/O/sub 3/; ZnO:Ni/sapphire; epitaxial growth conditions; high stability; low propagation loss; microwave low insertion loss SAW filter; outline dimensions; sapphire substrate; Insertion loss; Microwave filters; Piezoelectric films; Propagation losses; Radio frequency; SAW filters; Semiconductor films; Substrates; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.508755

Filename

508755