Title :
Microwave low insertion loss SAW filter by using ZnO/sapphire substrate with Ni dopant
Author :
Ieki, H. ; Tanaka, H. ; Koike, J. ; Nishikawa, T.
Author_Institution :
Murata Manuf. Co. Ltd., Kyoto, Japan
Abstract :
Microwave low insertion loss SAW filters are realized by using ZnO epitaxial films on a sapphire substrate. The epitaxial growth conditions and dopant are carefully determined to realize low propagation loss and high stability. 1.5 to 2.5 GHz range SAW filters are fabricated with an insertion loss of only 1 to 2 dB and outline dimensions of 0.01 to 0.02 cc.
Keywords :
II-VI semiconductors; UHF filters; acoustic microwave devices; nickel; sapphire; semiconductor epitaxial layers; semiconductor growth; surface acoustic wave filters; vapour phase epitaxial growth; zinc compounds; 1 to 2 dB; 1.5 to 2.5 GHz; Al/sub 2/O/sub 3/; Ni dopant; RF planar magnetron sputtering; ZnO epitaxial films; ZnO:Ni-Al/sub 2/O/sub 3/; ZnO:Ni/sapphire; epitaxial growth conditions; high stability; low propagation loss; microwave low insertion loss SAW filter; outline dimensions; sapphire substrate; Insertion loss; Microwave filters; Piezoelectric films; Propagation losses; Radio frequency; SAW filters; Semiconductor films; Substrates; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508755
