Silicon-On-Insulator-Based Technology MOSFET : Prospects For Application to Low Noise RF Integrated Circuits

Author

Dambrine, G. ; Raskin, J.P. ; Danneville, F. ; Vanhoenacker, D. ; Colinge, J.P. ; Picheta, L. ; Cappy, A.

Author_Institution

DÃ©partement HyperfrÃ©quences et Semiconducteurs, I.E.M.N., Avenue PoincarÃ©, B.P. 69, F-59652 Villeneuve d´´Ascq Cedex, France. TÃ©l. 33 3 20 19 78 61; Fax. 33 3 20 19 78 92; E-mail: gilles.dambrine@iemn.univ-lille1.fr

Volume

1

fYear

1998

fDate

Oct. 1998

Firstpage

721

Lastpage

726

Abstract

An exhaustive study of the high frequency four noise parameters of SOI-MOSFET, as function of various gate geometries (length, width, gate resistivity), is proposed. The emphasis is on high frequency noise modeling and measurement of SOI-MOSFET. We show that it is crucial to take into account both gate and drain noise sources in the case of these high performance devices. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimization ways to realize ultra low noise amplifiers is discussed.

Keywords

Application specific integrated circuits; Conductivity; Frequency measurement; Geometry; Integrated circuit noise; Integrated circuit technology; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1998. 28th European

Conference_Location

Amsterdam, Netherlands

Type

conf

DOI

10.1109/EUMA.1998.338076

Filename

4139163