An Empirical High-Frequency Large-Signal Model for High-Voltage LDMOS Transistors

The Chalmers HEMT and MESFET large-signal model has been extended to model high-voltage LDMOS transistors. The model´s ability to accurately predict harmonics at the output of the transistor makes it very useful in power amplifier designs where efficiency and intermodulation are important quantities. The large-signal performance was evaluated by a power spectrum method in order to get a global picture of the model´s large-signal performance. The models´ benefits, compared to standard MOSFET models, are the simplicity of both the extraction procedure and the implementation into commercial microwave CAE tools.