Title :
Scaling study of nanowire and multi-gate MOSFETs
Author :
Chen, Chin-Yu ; Liao, Yi-Bo ; Chiang, Meng-Hsueh
Author_Institution :
Dept. of Electron. Eng., Nat. Ilan Univ., Taiwan
Abstract :
In this paper, comprehensive comparisons of nanowire and multi-gate nMOSFETs in scaling capability using three-dimensional numerical simulations are presented. Their short channel effects and device performances are also investigated. The nanowire device requires less device dimension constraint on body diameter due to perfect surrounding gate-to-gate capacitive coupling and hence it is promising at sub-45 nm node.
Keywords :
MOSFET; nanowires; scaling phenomena; device performances; gate-to-gate capacitive coupling; multigate MOSFET; nanowire; scaling capability; short channel effects; three-dimensional numerical simulations; Doping profiles; FETs; FinFETs; Leakage current; MOSFETs; Nanoscale devices; Numerical simulation; Quantum dots; Scalability; Voltage control;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734462
