Title :
Prediction of channel thermal noise in twin silicon nanowire MOSFET (TSNWFET)
Author :
Lee, Jaehong ; Jeon, Jongwook ; Kim, Junsoo ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Nano Syst. Inst., Inter-Univ. Semicond. Res. Center (ISRC), Seoul, South Korea
Abstract :
In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 nm gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.
Keywords :
MOSFET; elemental semiconductors; nanowires; semiconductor device models; semiconductor device noise; silicon; thermal noise; MOSFET; Si; analytic thermal noise model; channel thermal noise; short channel effects; size 3.5 nm; size 40 nm; size 5 nm; twin silicon nanowire; Equations; MOSFET circuits; Nanoscale devices; Power MOSFET; Predictive models; Semiconductor device noise; Silicon; Thermal engineering; Thermal resistance; Wire;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734463
