Title :
Novel vertical sidewall MOSFETs with embedded gate
Author :
Lee, Tai-Yi ; Lin, Jyi-Tsong ; Lin, Kao-Cheng
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ. (NSYSU EE), Kaohsiung, Taiwan
Abstract :
In this paper we bring up a new progressive vertical structure (EGVMOS) with Embedded Gate for a MOSFET. This new structure provides not only eliminating the kink effect, but also having good gate controllability. ISE TCAD 2D simulation is carried out for evaluating its different electric characteristics. Being compared with the other vertical devices, the new device using the different implant tilts approves good results and demonstrates better device behaviors.
Keywords :
MOS integrated circuits; MOSFET; technology CAD (electronics); TCAD 2D simulation; embedded gate; kink effect; vertical devices; vertical sidewall MOSFET; Capacitance; Controllability; Electric variables; Etching; Fabrication; MOSFETs; Random access memory; Silicon; Substrates; Sun;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734465
