DocumentCode
2141498
Title
Investigations on the performance limits of the IMOS transistor
Author
Wang, Zhenhua ; Huang, Ru
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
72
Lastpage
75
Abstract
The Impact Ionization MOS (IMOS) transistor is a kind of promising concept as a candidate of MOS transistor due to its abrupt switching. However, some key issues will limit IMOS transistors for practical applications. In this paper, detailed physical explanations for the non-saturation of IMOS output characteristics and the unanticipated low drive current are presented. A new method to enhance the drive current of IMOS devices is reported and briefly discussed as well.
Keywords
MOSFET; impact ionisation; semiconductor device testing; MOS transistor; impact ionization; low drive current; output characteristics; performance limits; CMOS technology; Drives; FETs; Impact ionization; Leakage current; MOSFETs; Microelectronics; Semiconductor films; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734466
Filename
4734466
Link To Document