Laser generation in semiconductors due to high-current picosecond electron beams

Laser generation peculiarities in different semiconductor materials (A2B6 compositions) under the action of high-current picosecond electron beams were investigated. Current density on the sample could exceed 800 A/cm². Current pulses shorter than 300 ps FWHM were of special interest. The estimation of the current threshold densities that cause laser generation under such short pulses was given. Laser generation (line widths ~ 7 - 10 nm) in visible range on different samples (ZnSe, ZnCdS, CdS, CdS-CdSe) was obtained. The maximum pulse power of laser radiation exceeded 1000 W.