Title :
Noise in nano-scale MOSFETs and flash cells
Author :
Shin, Hyungcheol ; Yang, Seungwon ; Jeon, Jongwook ; Kang, Daewoong
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seuol, South Korea
Abstract :
In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices. Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (ET) were obtained by using accurate equations.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit noise; nanoelectronics; semiconductor device noise; CMOS devices; channel effects; compact channel thermal noise model; flash cells; nanoscale MOSFET; random telegraph noise; short-channel MOSFET; shot-like noise level; thermal noise model; trap energy; CMOS technology; Circuit noise; Equations; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Noise reduction; Semiconductor device modeling; Semiconductor device noise;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734478
