Noise in nano-scale MOSFETs and flash cells

Author

Shin, Hyungcheol ; Yang, Seungwon ; Jeon, Jongwook ; Kang, Daewoong

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seuol, South Korea

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

88

Lastpage

91

Abstract

In this paper, we present a compact channel thermal noise model for short-channel MOSFETs which takes into account various short channel effects. Then, we compared measured data with shot-like noise level and thermal noise model in sub-40 nm CMOS devices. Also we characterized four level RTN (Random Telegraph Noise) and extracted the characteristics of two independent traps in MOSFETs and flash cells. Their vertical, lateral locations in the oxide as well as the trap energy (E_T) were obtained by using accurate equations.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit noise; nanoelectronics; semiconductor device noise; CMOS devices; channel effects; compact channel thermal noise model; flash cells; nanoscale MOSFET; random telegraph noise; short-channel MOSFET; shot-like noise level; thermal noise model; trap energy; CMOS technology; Circuit noise; Equations; Low-frequency noise; MOSFETs; Noise level; Noise measurement; Noise reduction; Semiconductor device modeling; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734478

Filename

4734478