Title :
CMOS-NDR transistor
Author :
Guo, Wei-Lian ; Wang, Wei ; Niu, Ping-Juan ; Li, Xiao-yun ; Yu, Xin ; Mao, Lu-Hong ; Liu, Hongwei ; Yang, Guang-hua ; Song, Rui-Iiang
Author_Institution :
Sch. of Inf. & Commun., Tainjin Polytech. Univ., Tainjin, China
Abstract :
In this paper, a novel device - MOS-NDR transistor is proposed and fabricated which is composed of four N-channel metal-oxide-semiconductor field effect-transistor (NMOS) devices. This MOS-NDR transistor could exhibit the negative differential resistance (NDR) characteristics similar to the conventional NDR device such as compound material based RTD (resonant tunneling diode) in the current-voltage characteristics by suitably modulating the MOS parameters, at the same time it could realize good modulation effect by the third terminal and has advantages of low working voltage (peak voltage Vp=0.7 V) and high PVCR (Peak to Valley Current Ratio) (nearly 10:1). The design and fabrication of this device are completely compatible with the standard 0.35 ¿m CMOS process, thus can considerably extend the functions of the CMOS circuits into new scope.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; CMOS circuits; CMOS-NDR transistor; MOS parameters; N-channel metal-oxide-semiconductor field effect-transistor; NMOS devices; current-voltage characteristics; modulation effect; negative differential resistance; peak-to-valley current ratio; working voltage; CMOS process; CMOS technology; Circuits; Current-voltage characteristics; FETs; III-V semiconductor materials; Inorganic materials; MOS devices; Resonant tunneling devices; Voltage; CMOS technology; NDR device; Resonant Tunneling Diodes;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734479
