Title :
32nm Node Si and Si1−xGex SOI coplanar N channel “Vertical Dual Carrier Field Effect Transistor” for small signal mixed signal and communication applications
Author :
Xu, P. ; Xu, J. ; Yang, Y.H. ; Xu, Y.Z. ; Zhao, Y.F. ; Bai, D. ; Shen, S.K. ; Xiao, S. ; Li, G.H. ; Yang, R. ; Huang, D.H. ; Huang, C.
Author_Institution :
Tsing Hua Univ., Beijing, China
Abstract :
32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal and communication applications are presented.
Keywords :
Ge-Si alloys; elemental semiconductors; field effect transistors; silicon; Si; Si1-xGex; communication applications; coplanar n channel vertical dual carrier field effect transistor; mixed signal applications; size 32 nm; CMOS technology; Charge carrier processes; Current density; Differential equations; FETs; Impurities; Physics; Poisson equations; Radio frequency; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734480
